Concept for SiC utilizing MOSFETs

Concept for use of SiC as the wafer material for vertical MOSFETs*.

*Vertical MOSFETs　
MOSFETs type where electrodes are installed on the front and back of the chip to direct current flow vertically across the chip as shown in the figure. This is the standard structure for power MOSFETs and IGBTs.

Comparison of MOSFETs characteristics

Item	Symbol	Unit	MOSFETs	SJ-MOSFETs	SiC-MOSFETs
			F15F60HP2 （Shindengen）	Company A	Company B
Drain-Source voltage	VDSS	V	600	650	650
Drain current (DC)	ID	A	15	8	21
Drain current (Peak)	IDP	A	60	49	52
Total power dissipation	PT	W	95	30	103*
ON resistance	R(DS)ON	Ω	0.49(max.)	0.19(max.)	0.156(max.)
Input capacitance	Ciss	pF	1750	1150	460
Single avalanche energy	EAS	mJ	80	57	-
Drain-source diode di/dt strength	di/dt	A/μs	350	55	-
Ron×Ciss (figure of merit)	-	Ω・pF	857.5	218.5	71.76

*Company B’s product uses a large package so total power dissipation is also large.