Bridge diodes

▼D35XB80 / D40XB100
Bridge diodes which achieve a maximum rated current of 40A .Capable of large current and high power

▼LK25XB60
Improved lightning surge resistance and low VF characteristics which contribute to lower power consumption

▼US30KBV80FR
 175°C guarantee,Compatible with space saving applications,large current bridge diodes


■800V withstand voltage / large current single phase bridge diodes
■Capable of outputting large current with standard 5S packages
 (D35XB80:35A、D40XB100:40A)
■Internal structure with excellent heat dissipation
■Insulated SIP type single phase bridge diodes
 (Intellectual Property Right registered structure)
■Lead temperatures of 100°C and lower
 (with 25°C water cooled heat dissipation fins attached at 35 A output)

Internal structure with excellent heat dissipation
Shindengen's 5S package has an internal structure with excellent heat dissipation due to its thermal design, and the temperature difference between the four chips and terminals is extremely small. This package is ideal for bridge diodes with extremely high component reliability and mounting reliability.
The 5S package is an insulated SIP type bridge diode package, which our company was the first to release commercially worldwide, and it has become an industry standard package.



Product Specifications
Part Name Absolute Maximum Ratings Electrical Characteristics
Tstg [°C] Tj [°C] IF typ [A] VRRM [V] IFSM [A] VF max [V] IR max [uA] trr max [ns] Rth(j-c) [°C/W]
D40XB100
NEW
-55~150 -55~150 40
(Tc=85°C)
1000 550
(50Hz)
1.05
(IF=20A per diode)
10
(VR=1000V per diode)
27 0.8
D35XB80 -55~150 -55~150 35
(Tc=93°C)
800 550(50Hz) 1.05
(IF=17.5A per diode)
10
(VR=800V per diode)
27 0.8
D25XB80 -40~150 -40~150 35
(Tc=98°C)
800 350(50Hz) 1.05
(IF=12.5A per diode)
10
(VR=800V per diode)
※1 1.0
※1 Contact us for details.


■600V withstand voltage / low VF bridge diodes
■Industry’s highest standard low VF of max 0.90V (LL Series)
■Lowest VF after the LL Series at max 0.95V (LK Series)
■SIP type single phase bridge diodes
■Achieves low VF in actual operation ranges
■UL1557 certified product

Internal structure with excellent heat dissipation
The 5S package is an insulated SIP type bridge diode package, which our company was the first to release commercially worldwide, and it has become an industry standard package.
Shindengen's 5S package has an internal structure with excellent heat dissipation due to its thermal design, and the temperature difference between the four chips and terminals is extremely small. This package is ideal for bridge diodes with extremely high component reliability and mounting reliability.
Industry’s highest standard low VF
Comparison table of VF characteristics with Shindengen conventional products(D25XB80).


Product Specifications
Part Name Absolute Maximum Ratings Electrical Characteristics Molding compound
Tstg [°C] Tj [°C] IF typ. [A] VRRM [V] IFSM [A] VF [V] IR max [uA]※2 Rth(j-c) [°C/W]
LL15XB60 -55~150 -55~150 15
(Tc=124°C)
600 200 typ 0.86
max 0.90
10 1.0 Non - Green
LL25XB60 -55~150 -55~150 25
(Tc=113°C)
600 300 typ 0.87
max 0.92
10 0.8 Non - Green
LL25XB60F -55~150 -55~150 25
(Tc=113°C)
600 300 typ 0.87
max 0.92
10 0.8 Green
(Halogen Free)
LK25XB60 -55~150 -55~150 25
(Tc=93°C)
600 400 max 0.95 10 0.8 Non - Green
※2 VR=600V per diode


■Contribute to reduction of power consumption thanks to its high temperature operation guarantee (175°C)
■Environmentally friendly (halogen-free resin)
■Dielectric strength 2.0kV UL1557 certified product

contribute to reduction of power consumption thanks to its high temperature operation guarantee (175°C)
Bridge diodes which can contribute to reduction of power consumption through active utilization of diode in high temperature low VF ranges thanks to its high temperature operation guarantee.
Product Specifications
Part Name Absolute Maximum Ratings Electrical Characteristics Molding
compound
Tstg [°C] Tj [°C] IF typ. [A] VRRM [V] IFSM [A] VF max [V] IR max ※3 Rth(j-c) [°C/W]
US30KBV80FR -55~175 -55~175 30
(Tc=126°C)
800 350 1.05 5 0.8 Green
(Halogen Free)
US30KB80R -55~150 -55~150 30
(Tc=97°C)
800 350 1.10 10 0.8 Non - Green
※3 VR=600V per diode

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