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High-side Nch-MOSFET Gate Driver IC with Forward Control Function Released
~A product which contributes to downsizing and reduced dissipation~

Mar. 11, 2025

Shindengen Electric Manufacturing Co., Ltd. has begun sales of the MF2008SW High-side Nch-MOSFET gate driver IC for reverse connection protection and reverse current protection applications.

Power consumption has increased in automobiles in recent years due to more advanced electronic devices, functional integration, and greater multi-functionality. Conventionally, diodes have been used for reverse polarity protection and reverse current prevention in the ECU input section, but issues such as power loss and increased heat generation due to increased current have become a problem. As a result, there is a growing demand for “ideal diodes” as alternative devices. These devices need to prevent reverse current even when the unit is in a low-power or light-load state, so they need to be even more reliable.

Shindengen has launched the MF2008SW High-side Nch-MOSFET gate driver IC in response to these needs. This product can be used as an ideal diode by being combined with an Nch-MOSFET. By incorporating forward control into the previous model※1, it is possible to stop the gate before reverse current flows, preventing reverse current even under light loads. In addition, compared to conventional diodes※2, it is possible to suppress power loss by approximately 72% and temperature rise by approximately 51%※3, which contributes to the miniaturization and low power loss of devices that require reverse polarity and reverse current protection, such as automotive products.
It can also be used as a bidirectional conduction semiconductor relay by being combined with 2 Nch-MOSFETs to contribute to faster response and downsizing by reducing response time to approximately 1/1000 and mounting area by approximately 96% compared to conventional mechanical relays.

※1  High-side Nch-MOSFET gate driver IC「MF2007SW」
※2 Compared to「D30FDC4S」
※3 When combined with Shindengen's P24LF4QNK Nch-MOSFET


■ Features
【When used as an ideal diode】

Forward Control Function

[VIN] - [OUT] < 30 mV stops the voltage boost, and [VIN] - [OUT] > 45 mV restarts the voltage boost, controlling the VDS voltage of the external Nch MOSFET.
The gate stops before reverse current flows.

Reduced power dissipation

When used as an ideal diode※3, this can reduce power dissipation by approximately 72% compared to conventional diodes※2.


※2 Compared to「D30FDC4S」
※3 When combined with Shindengen's P24LF4QNK Nch-MOSFET

 Temperature increase control

When used as an ideal diode※3, this product can inhibit temperature increases by approximately 51% compared to conventional diodes※2.

※2 Compared to「D30FDC4S」
※3 When combined with Shindengen's P24LF4QNK Nch-MOSFET

【When used as an semiconductor relay】

High speed response

When used as a semiconductor relay, the product has a fast operation time in response to ON/OFF signals, making it possible to reduce response times to approximately 1/20 for ON signals, and approximately 1/1000 for OFF signals compared to mechanical relays.

Reliable ON/OFF switching

The minute vibrations that can occur when switching between ON and OFF with mechanical relays, does not occur with semiconductor relays※4.
※4 Vibration can occur under some conditions.




Reduction in mounting area

When used as a semiconductor relay, this product can reduce mounting area by approximately 96% compared to conventional relays.



Other features

・AEC-Q100 compliance
・VDS voltage difference of external Nch-MOSFET output as current
(Sink / source current supplied from IDET terminal)


■ Typical Applications

・ADAS
・Various vehicle installation ECU
・CNC
・Sequencer
・Device inputs and outputs which require O-rings

■Block Diagram

■External Dimensions Diagram


■ Product Specifications

  MF2008SW

Operating voltage

4.5~65V
Operating consumption current 200 μA
Standby current ≦5μA(external signal)
Booster circuits output current 75μA (Typ.)
Boost voltage 12.5V(Typ.)
Reverse current_OFF time 200ns/0.7A (Typ.)
EN_OFF time 50ns/0.12A(Typ.)
When the power supply is connected in reverse Current reduction, External gate discharge
Charge pump Built-in capacitor
 Forward Control 30~45mV

■ Factory Location

Higashine Shindengen Co., Ltd. etc.



■ Contact information


Please note that the information contained in releases is current as of the date of press announcement, but may be subject to change without prior notice.

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