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Next-generation SiC-SBD sample shipments to begin
Contributing to the increased efficiency and miniaturization of high-voltage equipment

Jan. 14, 2025

Shindengen Electric Manufacturing will begin shipping samples of the WS Series of SiC Schottky barrier diodes for high-voltage equipment.

In terms of energy conservation, there is a demand for power supplies used in industrial and consumer equipment to be even more efficient and have lower losses. For this reason, there is a trend towards replacing conventional fast recovery diodes (FRDs) with SiC Schottky barrier diodes (SiC-SBDs) which can operate at high speeds. In addition, as we work to achieve smaller and lighter devices through the use of higher frequencies, the issue of switching noise countermeasures is becoming a challenge.
In order to meet these needs, Shindengen Electric Manufacturing will begin shipping samples of the SiC-SBD WS Series for industrial and consumer equipment.
Compared to conventional FRDs, this product reduces VF by about 50% and recovery characteristics by about 85%. This significantly reduces switching losses, making the device more efficient. Furthermore, the approximately 70% improvement in IRP also greatly reduces switching noise, contributing to miniaturization of peripheral circuits.
It is also planned to be AEC-Q101 compliant allowing it to be used in automotive products.

※ Comparison with the FRD「S20LC60UST」


■ Features

1. Significantly reduces switching losses【Fig.1 Fig.2
Compared to conventional FRDs, switching losses are greatly reduced by reducing VF by about 50% and recovery characteristics by about 85%.
2. Significantly reduces switching lossesFig.2
Compared to conventional FRDs, switching noise is greatly reduced by improving IRP by about 70%.
3. It is planned to be AEC-Q101 compliant

※ Comparison with the FRD「S20LC60UST」

Fig.1 VF(max)

 Fig.2 IRP・Qrr


■ Typical Applications

Server power
Production power
Consumer appliances
Onboard charger
On-board DCDC converter
PFC circuit, etc.

■ Specifications

Products Tj[℃] IF(AV)[A] VRRM[V] IFSM[A] VF(typ)[V] IR(max) [μA] trr (typ)[ns] / Qrr (typ)[pF]
WS10FB65AK -55 to 175 10 650 50 1.49
(IF=10A)
50
(VR=650V)
6/5
WS20FBC65AK -55 to 175 20 650 50 1.49
(IF=10A per diode)
50
(VR=650V per diode)
6/5
(per diode)
WS20FB65AK -55 to 175 20 650 90 1.47
(IF=20A)
400
(VR=650V)
8/10
WS20GC65AK -55 to 175 20 650 90 1.47
(IF=20A)
400
(VR=650V)
8/10
WS20GCC65AK -55 to 175 20 650 50 1.49
(IF=10A per diode)
50
(VR=650V per diode)
6/5
(per diode)
WS40GCC65AK -55 to 175 40 650 90 1.47
(IF=20A per diode)
400
(VR=650V per diode)
8/10
(per diode)
WS10GC120AK -55 to 175 10 1200 90 1.48
(IF=10A)
200
(VR=1200V)
8/10
WS20GCC120AK -55 to 175 20 1200 90 1.48
(IF=10A per diode)
200
(VR=1200V per diode)
8/10
(per diode)

■ Equivalent Circuit

■ Sample Shipment Time

March 2025

■ Scheduled launch date

August 2026


■ Contact information

Please note that the information contained in releases is current as of the date of press announcement, but may be subject to change without prior notice.

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