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Announcing development of an ideal diode IC with reverse connection and reverse current protection which reduces conduction dissipation by 55% Built-in control circuit eliminates the need for external circuits

Aug. 26, 2020

Shindengen Electric Manufacturing Co., Ltd. has developed and begun shipping samples of the MF2003SV IC V-Diode^TM ideal diode. By integrating a Pch MOSFET with reverse connection protection and reverse current protection functions, this product greatly reduces power dissipation, eliminates the need for external parts, simplifies design, and contributes to circuit downsizing.
This makes it possible to simplify heat dissipation measures through reduction of power consumption in reverse connection protection and reverse current protection applications for vehicle installed electronic devices, which use batteries and DC/DC converters as input sources, which in turn contributes to downsizing of devices.
MF2003SV samples are currently shipping with sales expected to begin in August 2021.

※ V-Diode^TM stands for Virtual Diode

■Overview

In recent years, advances in electronic control technologies for vehicle installations have resulted in an increase in the number of vehicle installations of ECU (Electronic Control Unit) which control electronic devices, as well as diversification of the applications for these ECU, including meters, heads-up displays, transmissions, lane keeping assist systems, and more.
These ECU use output from Li-ion and lead batteries as well as DC/DC converters as input sources, and have long used diodes as the reverse connection protection and reverse current protection elements for their inputs. However, consolidation of functions and a shift to multi-functionality in electronic devices has resulted in larger currents, which in turn increases the dissipation and heat generation of diodes, impeding the downsizing of heat dissipation countermeasure devices, so there has been increasing demand for reverse connection protection and reverse current protection elements which can reduce dissipation and heat generation.
In response to these market needs, Shindengen has developed the MF2003SV IC V-Diode^TM ideal diode which integrates a Pch MOSFET with reverse connection protection and reverse current protection functions.
By utilizing a Pch MOSFET instead of the conventional diodes, this product reduces conduction dissipation by 55%^*1 and greatly reduces temperature increases by 37%^*1, allowing not only for downsizing of heat dissipation measures, but also reducing mounting area by 75%^*1, contributing to device downsizing as well.
In addition, this product integrates a Pch MOSFET drive circuit, eliminating the need for external parts and thereby contributing to simplified design.

*1: Compared to previous Shindengen products

■Features

1：Significant reduction of dissipation and temperature increases [Fig.1]
　　Use of a Pch MOSFET reduces conduction dissipation by 55% and temperature increases by 37% compared to convention diodes.
2：Compact package which contributes to device downsizing [Fig.2]
　　Utilizes a WSON8 (4×4 mm) wettable, flank compatible leadless package.
　　Simplifies heat dissipation measures by reducing dissipation and decreases mounting area by 75%.
3：Built-in reverse current protection and reverse connection protection functions [Fig.3]
　　Pch MOSFET and reverse current protection and reverse connection protection functions in a single package. Eliminates the need for external parts.
4：Built-in Pch MOSFET protection active clamp function
　　Equipped with a function which clamps at ΔV_DS ≈40 V in order to prevent breakdown of the built-in Pch MOSFET.

■Typical Applications

・Various vehicle installation ECU
　　Meters, heads-up displays, navigation systems, audio, USB modules, etc.
・Device inputs and outputs which require O-rings

■Circuit examples

■V-DiodeTM MF2003SV Product Specifications

	Temporary SPEC
Withstand voltage	42V
Operating voltage	2.5～40V
Average current(approx.)	4A
Quiescent current	≦3μA
Built-in Pch MOSFET Ron	57mΩ（typ.）
Reverse connection protection	Built-in
Reverse current protection	Built-in (25mV offset comparator)
IFSM	70A
Toff	500ns(typ.)
Tj	150℃(max.)

*The MF2003SV is still under development so the specifications are subject to change without notice.

■External Dimensions Diagram（Unit：mm）

■Factory Location

Higashine Shindengen Co., Ltd. etc.

■Contact information